Single Bipolar Transistors 2N3706 APM TIN/LEAD product image

2N3706 APM TIN/LEAD

$0.37
  • Description:20V 800MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:5aeb5c336ffb Category: Brand:

  
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2N3706 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 20V 800MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3706 APM TIN/LEAD

  • Description:20V 800MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3706 APM TIN/LEAD

2N3706 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3706 APM TIN/LEAD is a PNP silicon epitaxial planar transistor housed in a TO-92 (TO-226AA) through-hole package. It features a collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 100 mA. The device provides a DC current gain (hFE) ranging from 50 to 500 at a collector current of 10 mA. With a maximum power dissipation of 625 mW and a transition frequency of 100 MHz, it operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar construction for stable performance
  • Four-quadrant operation capability
  • High DC current gain suitable for amplification

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications
  • Audio signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm lead-free or tin/lead composition requirements. Confirm RoHS compliance status with the manufacturer prior to procurement. Ensure the TO-92 package dimensions match the target PCB footprint. Validate that the 40V rating meets the circuit's peak voltage demands.

Single Bipolar Transistors Selection Notes

Select this component for low-power PNP switching and amplification tasks requiring high gain. Compare the 100 mA current limit against load requirements. Evaluate the 625 mW thermal dissipation capacity relative to ambient conditions. Consider the 100 MHz transition frequency for signal bandwidth limitations.

Single Bipolar Transistors Part Context

This part belongs to the standard discrete bipolar junction transistor family manufactured by Central Semiconductor Corp. It serves as a fundamental active component for analog and digital logic interfaces. The TO-92 package offers a compact form factor for general electronic assemblies.

Single Bipolar Transistors Replacement Considerations

  • 2N3706A
  • 2N3706APM

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 40 V.

Is the device suitable for high-frequency applications?

It has a transition frequency of 100 MHz, making it suitable for moderate-frequency amplification but not RF applications.

What is the typical DC current gain?

The DC current gain (hFE) ranges from 50 to 500 when tested at a collector current of 10 mA.

2N3706 APM TIN/LEAD2N3706 APM TIN/LEAD
$0.37
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