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2N3706 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 20V 800MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.
The Central Semiconductor Corp 2N3706 APM TIN/LEAD is a PNP silicon epitaxial planar transistor housed in a TO-92 (TO-226AA) through-hole package. It features a collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 100 mA. The device provides a DC current gain (hFE) ranging from 50 to 500 at a collector current of 10 mA. With a maximum power dissipation of 625 mW and a transition frequency of 100 MHz, it operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix against official datasheets to confirm lead-free or tin/lead composition requirements. Confirm RoHS compliance status with the manufacturer prior to procurement. Ensure the TO-92 package dimensions match the target PCB footprint. Validate that the 40V rating meets the circuit's peak voltage demands.
Select this component for low-power PNP switching and amplification tasks requiring high gain. Compare the 100 mA current limit against load requirements. Evaluate the 625 mW thermal dissipation capacity relative to ambient conditions. Consider the 100 MHz transition frequency for signal bandwidth limitations.
This part belongs to the standard discrete bipolar junction transistor family manufactured by Central Semiconductor Corp. It serves as a fundamental active component for analog and digital logic interfaces. The TO-92 package offers a compact form factor for general electronic assemblies.
The maximum collector-emitter breakdown voltage (BVCEO) is 40 V.
It has a transition frequency of 100 MHz, making it suitable for moderate-frequency amplification but not RF applications.
The DC current gain (hFE) ranges from 50 to 500 when tested at a collector current of 10 mA.
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