2N3735L

Single Bipolar Transistors Overview

The 2N3735L is a silicon NPN single bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-5 metal can package for through-hole mounting. The device supports a maximum DC collector current of 1.5 A and features a collector-emitter breakdown voltage (VCEO) of 40 V, with a collector-base voltage (VCBO) of 75 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 1 W. The component operates within a temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 1 A and 1.5 V, and a maximum saturation voltage of 900 mV at 100 mA base and 1 A collector current.

Single Bipolar Transistors Feature Summary

• Military-grade qualification compliant with MIL-PRF-19500/395 standards
• High thermal stability enabling operation up to 200°C junction temperature
• Robust silicon construction in a hermetically sealed TO-5 metal can package

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• High-reliability industrial control circuits
• Harsh environment signal processing hardware

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet to confirm exact performance grades and testing requirements. Ensure compliance with MIL-PRF-19500/395 specifications if military qualification is required. Confirm RoHS status as non-compliant for this specific part number. Validate that the TO-5 package dimensions match the mechanical constraints of the target assembly before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and wide temperature operation are critical. The TO-5 package provides superior thermal management compared to plastic alternatives. Consider the 1.5 A current rating and 40 V voltage limits during circuit design. Verify that the required hFE gain meets the minimum threshold of 20 for the intended application load conditions.

Single Bipolar Transistors Part Context

This part belongs to the legacy 2N3735 family of NPN transistors produced by Microchip Technology. It serves as a ruggedized alternative to commercial grade devices, specifically designed for demanding environments. The product line maintains compatibility with historical military specifications while utilizing modern silicon manufacturing processes.

Single Bipolar Transistors Replacement Considerations

JAN2N3735L

Single Bipolar Transistors FAQ

Is the 2N3735L RoHS compliant?

No, the 2N3735L is not RoHS compliant according to manufacturer documentation.

What is the maximum junction temperature for this transistor?

The maximum operating junction temperature is +200°C.

Does this component require military qualification?

Yes, it is qualified to MIL-PRF-19500/395 standards.