2N3763 PBFREE

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3763 PBFREE is a silicon PNP epitaxial planar transistor designed for core driver applications. It features a maximum collector current of 150 mA and a collector-emitter voltage rating of 60 V. The device offers a power dissipation capacity of 1 W and a gain bandwidth product of 150 MHz. Operating temperatures range from -65°C to +200°C junction temperature. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 900 mV.

Single Bipolar Transistors Feature Summary

• Epitaxial planar construction for reliable switching performance
• High junction temperature capability up to 200°C
• Designed specifically for core driver applications

Single Bipolar Transistors Applications

• Core driver circuits
• Switching applications requiring high temperature stability
• General purpose PNP transistor tasks

Single Bipolar Transistors Procurement Notes

Verify the specific suffix requirements when ordering lead-free plated devices, as the manufacturer mandates adding 'PBFREE' to the part number. Confirm availability status directly with the supplier, as this component has been scheduled for obsolescence by the manufacturer. Ensure that the procurement documentation explicitly references the correct designation to avoid receiving non-compliant or discontinued variants during acquisition.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching in high-temperature environments. The 150 mA current rating suits moderate load driving needs. Consider the TO-39 metal package for thermal management. Evaluate the 60 V voltage limits against circuit peaks. The high junction temperature rating allows operation in demanding thermal conditions where standard silicon devices might fail.

Single Bipolar Transistors Part Context

This transistor belongs to the broader category of bipolar junction transistors manufactured by Central Semiconductor. It shares design characteristics with other PNP types in their lineup but is distinctively optimized for core driver roles. The component utilizes silicon technology and follows standard military-style numbering conventions common in legacy semiconductor classifications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include JANTXV2N3763 variants from manufacturers such as Microsemi, Semicoa, and Raytheon Company. These alternatives maintain similar electrical specifications and pin configurations. Verify compatibility regarding package type and specific gain ranges before implementation.