2N3791

Single Bipolar Transistors Overview

The Microchip Technology 2N3791 is a power bipolar junction transistor (BJT) constructed from silicon with PNP polarity. It utilizes a TO-3 metal flange mount package designed for through-hole installation. The device supports a maximum collector current of 10 A and a collector-emitter breakdown voltage of 60 V. It features a minimum DC current gain (hFE) of 25 and operates within a temperature range of -55 °C to +175 °C. The component has a power dissipation rating of 65 W and includes two pins.

Single Bipolar Transistors Feature Summary

• High-current capability suitable for power switching applications
• Robust metal TO-3 package for effective thermal management
• Wide operating temperature range for demanding environments

Single Bipolar Transistors Applications

• Power amplifier circuits
• Voltage regulation systems
• Industrial motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as the 2N3791 designation may be produced by multiple vendors including SSDI or legacy manufacturers. Confirm RoHS compliance status, as older revisions may not meet current environmental standards. Ensure the TO-3 package dimensions match your heat sink interface requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high collector current handling and robust thermal performance are required in a standard TO-3 form factor. Consider the PNP configuration and 60 V breakdown voltage limits against circuit demands. Evaluate the minimum hFE of 25 for drive requirements in switching or linear modes compared to alternative transistors with higher gain specifications.

Single Bipolar Transistors Part Context

The 2N3791 belongs to the class of general-purpose power NPN/PNP transistors historically used in industrial and audio equipment. It serves as a discrete semiconductor solution for medium-to-high power applications where integrated circuits lack sufficient current handling capacity. The TO-3 metal case provides superior heat dissipation compared to plastic packages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified.