Single Bipolar Transistors 2N3903 TRE TIN/LEAD product image

2N3903 TRE TIN/LEAD

$0.20
  • Description:40V 200MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:949ba3d262f5 Category: Brand:

  
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2N3903 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 40V 200MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3903 TRE TIN/LEAD

  • Description:40V 200MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3903 TRE TIN/LEAD

2N3903 TRE TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3903 TRE TIN/LEAD is an NPN silicon planar epitaxial transistor designed for general-purpose switching and amplifier applications. It features a through-hole TO-92-3 package with tin/lead terminations. Key electrical parameters include a maximum collector-emitter voltage of 40 V, a maximum collector current of 200 mA, and a power dissipation rating of 625 mW. The device operates within a temperature range of -65°C to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

  • Utilizes NPN silicon planar epitaxial construction for reliable performance in switching and amplification tasks.
  • Designed for through-hole mounting using a standard TO-92-3 package configuration.
  • Capable of operating across a wide thermal range suitable for demanding industrial environments.

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Electronic switching applications
  • Low-power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's latest documentation to confirm lead-free status or plating composition requirements. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Confirm that the tin/lead termination meets the target assembly process specifications before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 40V breakdown voltage and 200mA continuous current capability is required. The TO-92-3 package is suitable for prototyping and low-volume production where through-hole technology is preferred. Consider the 625mW power dissipation limit when designing heat management strategies for the application environment.

Single Bipolar Transistors Part Context

This part belongs to the widely recognized 2N390x series of small-signal transistors. While many manufacturers produce equivalents, the Central Semiconductor variant specifies particular pinout and mechanical dimensions associated with their TO-92-3 implementation. The 'TRE' designation typically indicates tape and reel packaging, while 'TIN/LEAD' specifies the terminal finish.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include the 2N3904 (NPN) or generic 2N3903 equivalents from other manufacturers such as ON Semiconductor or Fairchild, provided pinouts match. Verify that replacement parts maintain the same 40V Vceo and 200mA Ic ratings to ensure circuit compatibility without redesign.

2N3903 TRE TIN/LEAD2N3903 TRE TIN/LEAD
$0.20
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