Single Bipolar Transistors 2N4032 TIN/LEAD product image

2N4032 TIN/LEAD

$0.97
  • Description:60V 1A 800MW TH TRANSISTOR-SMALL
  • Series:-

SKU:3aecc9048929 Category: Brand:

  
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2N4032 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 1A 800MW TH TRANSISTOR-SMALL. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4032 TIN/LEAD

  • Description:60V 1A 800MW TH TRANSISTOR-SMALL
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 100mA, 5V
  • Power - Max:-
  • Frequency - Transition:100MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N4032 TIN/LEAD

2N4032 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4032 TIN/LEAD is a small signal PNP silicon bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 80V, a maximum continuous collector current of 1A, and a power dissipation rating of 0.8W. The device utilizes a TO-39 metal can package with three through-hole terminals. Key electrical characteristics include a minimum DC current gain (hFE) of 10 and a transition frequency (fT) of 100 MHz. The component operates within a temperature range up to 175°C and is constructed using standard silicon technology.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for complementary circuit designs
  • High collector current capability of 1A for robust switching performance
  • Metal can TO-39 packaging providing thermal stability and durability
  • Transition frequency of 100 MHz supporting high-speed signal processing

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Electronic switching applications
  • Complementary pair configurations in audio or logic stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ensures the tin/lead terminal finish as indicated. Confirm RoHS compliance status, as leaded versions may not meet environmental directives. Check manufacturer documentation for exact pinout definitions relative to the TO-39 package orientation. Ensure the supplier provides official datasheets confirming the 80V V(BR)CEO and 1A IC ratings for your design requirements.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 1A current handling and 80V voltage rating is required in a TO-39 package. Consider its 100 MHz transition frequency for medium-speed applications. Compare against NPN counterparts if complementary pairs are needed. Verify thermal management capabilities given the 0.8W power dissipation limit in the metal case format.

Single Bipolar Transistors Part Context

This part belongs to the family of small signal bipolar transistors manufactured by Central Semiconductor Corp. It shares the TO-39 metal can form factor with other high-reliability discrete semiconductors from the same era. The 2N4032 designation identifies it specifically as a PNP variant within the broader classification of general-purpose silicon transistors used in industrial and commercial electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers were not identified in the provided source material.

2N4032 TIN/LEAD2N4032 TIN/LEAD
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