Jfets 2N4117A product image

2N4117A

$3.05
  • Description:JFET N-CH 40V TO206AF
  • Series:-

SKU:040e5875ccfd Category: Brand:

  
  • Quantity
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2N4117A is listed in the Jfets range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is JFET N-CH 40V TO206AF. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N4117A

  • Description:JFET N-CH 40V TO206AF
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):30 µA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:600 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:3pF @ 10V
  • Resistance - RDS(On):-
  • Power - Max:300 mW
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package:TO-206AF (TO-72)
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for 2N4117A

2N4117A

Jfets Overview

The Vishay Siliconix 2N4117A is an N-channel JFET designed for ultra-high input impedance applications. It features a gate-source breakdown voltage of -40 V minimum and a gate-source cutoff voltage range of -0.6 V to -1.8 V. The device typically operates with a gate reverse current of 0.2 pA at room temperature, with a maximum limit of 1 pA. Forward transconductance is specified at a minimum of 70 µS. Power dissipation is rated at 300 mW at 25°C case temperature.

Jfets Feature Summary

  • Ultra-low leakage characteristics suitable for high-impedance front-end amplifiers
  • Hermetically sealed TO-206AF package allows full military processing per MIL-S-19500
  • Low noise performance with insignificant signal loss when used with high-impedance sources

Jfets Applications

  • High-impedance transducer amplifiers
  • Smoke detector input circuits
  • Infrared detector amplifier stages
  • Precision test equipment

Jfets Procurement Notes

Verify the specific revision status and manufacturing origin before procurement, as datasheet revisions may alter mechanical or electrical tolerances. Confirm that the received components match the hermetic sealing requirements if military processing standards are mandated for the application environment.

Jfets Selection Notes

Select this component when circuit design requires minimal gate current to prevent loading of high-impedance signal sources. Ensure the operating junction temperature remains within the -55°C to +175°C range defined for the 2N prefix series to maintain specified leakage and breakdown parameters.

Jfets Part Context

The 2N4117A belongs to the 2N/PN/SST4117A series of N-channel JFETs manufactured by Vishay Siliconix. This series includes variants with different cutoff voltages and saturation currents, such as the 2N4118A and 2N4119A, offering flexibility for various mid-to-high frequency designs requiring ultra-high input impedance.

Jfets Replacement Considerations

Micross lists the 2N4117A as a direct replacement for the discontinued Siliconix version. Verify pinout compatibility and thermal resistance specifications when substituting with other manufacturers' equivalents to ensure circuit stability.

Jfets FAQ

What is the typical gate reverse current for the 2N4117A?

The device typically operates at a gate reverse current of 0.2 pA at room temperature, with a specified maximum limit of 1 pA.

Is the 2N4117A package suitable for military applications?

Yes, the hermetically sealed TO-206AF (TO-72) package allows for full military processing in accordance with MIL-S-19500 standards.

What is the minimum forward transconductance specified for this part?

The common-source forward transconductance (gfs) has a minimum specification of 70 µS at VDS = 10 V and VGS = 0 V.

2N4117A2N4117A
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