2N4124 TRE TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N4124 TRE TIN/LEAD is a silicon NPN bipolar junction transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage of 25 V, a collector-base voltage of 30 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 200 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a transition frequency of 300 MHz and a DC current gain ranging from 120 to 360 at specified test conditions. Operating temperatures span from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Utilizes silicon technology for robust performance across wide temperature ranges.
• Provides high DC current gain suitable for amplification applications.
• Features a standard TO-92-3 leaded package for reliable through-hole mounting.

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications
• Low-frequency oscillator designs

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TRE' against official manufacturer documentation to confirm tin/lead plating compliance and RoHS status. Confirm the exact power dissipation rating (625 mW vs 1.5 W) as datasheets vary by revision. Ensure the ordering quantity aligns with factory packaging multiples. Cross-reference the Mouser part number 610-2N4124-TL for accurate identification.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN BJT with moderate voltage ratings and high gain is required for through-hole assembly. Compare the 625 mW thermal limit against circuit requirements; if higher power handling is needed, consider variants with different packaging or heat sinking capabilities. Verify that the 200 mA current limit meets load demands without exceeding saturation voltage specifications.

Single Bipolar Transistors Part Context

This part belongs to the 2N4124 series of small-signal NPN transistors manufactured by Central Semiconductor. Similar parts in the family include the 2N4124 PBFREE and equivalents from other manufacturers like onsemi. The device shares the TO-92-3 form factor common to general-purpose discrete semiconductors used in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

• 2N4124TAR (onsemi)
• 2N4124 PBFREE (Central Semiconductor)

Single Bipolar Transistors FAQ

What is the maximum power dissipation for this component?

Official listings indicate a power dissipation of 625 mW, though some sources cite 1.5 W. Consult the specific datasheet for the 'TRE' suffix variant to confirm the thermal rating.

Is this component RoHS compliant?

The 'TIN/LEAD' designation typically indicates non-RoHS compliance due to lead content. Check the manufacturer's environmental declaration for the specific batch or suffix.

What is the typical DC current gain range?

The minimum DC current gain (hFE) is 120, with a maximum reaching 360 at specified test currents of 1 V and 2 mA.