2N4393UB

Jfets Overview

The Microchip Technology 2N4393UB is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for high-reliability applications. It utilizes a TO-18-3 metal can package, providing robust environmental protection and thermal stability. The device operates with a maximum drain-source voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain current ranging from 5 mA to 12 mA and a maximum power dissipation of 360 mW. It supports an extended operating temperature range from -65°C to +175°C, ensuring functionality in extreme conditions.

Jfets Feature Summary

• High-temperature operation capability up to 175°C
• Hermetically sealed TO-18-3 metal can construction
• Silicon N-channel JFET technology
• Low noise performance suitable for sensitive signal paths

Jfets Applications

• Military and aerospace electronic systems
• High-temperature sensor interfaces
• Precision analog signal processing circuits
• Harsh environment instrumentation amplifiers

Jfets Procurement Notes

Verify the specific manufacturer datasheet for the 2N4393UB to confirm exact pinout configurations and absolute maximum ratings before integration. Ensure that the procurement source provides traceability documentation required for regulated industries. Confirm RoHS compliance status if applicable to the specific production lot, as military-grade components may have different regulatory classifications than commercial equivalents.

Jfets Selection Notes

Select the 2N4393UB when designing circuits requiring stable biasing at elevated temperatures where standard plastic-packaged transistors would fail. Consider the TO-18-3 package constraints regarding PCB mounting and thermal management. Compare the 5 mA to 12 mA Idss range against circuit requirements to ensure proper gain and impedance matching without external trimming.

Jfets Part Context

This component belongs to the 2N43xx series of N-channel JFETs manufactured by Microchip Technology. These devices are typically characterized for use in defense and space applications due to their radiation hardness and wide temperature tolerance. The UB suffix generally denotes a specific binning or testing standard within the manufacturer's portfolio for high-reliability discrete semiconductors.

Jfets Replacement Considerations

Direct replacements include other hermetically sealed N-channel JFETs in TO-18 packages such as the 2N5457 or 2N5458, though parameter variations in Idss and breakdown voltages must be verified. Cross-reference with MIL-SPEC equivalents like the JANTX2N4393 for guaranteed military-grade performance and screening standards.