2N4416AUB

Jfets Overview

The Microchip Technology 2N4416AUB is an N-channel Junction Field-Effect Transistor (JFET) designed for sensitive mixer and VHF amplifier applications. It utilizes Interfet N0026S geometry to achieve low noise performance, with a typical noise figure of 4 nV/√Hz, and extremely low gate leakage current, typically less than 10 pA at room temperature. The device features a -35 V minimum gate-to-source breakdown voltage (BVgss), a drain-to-source saturation current (Idss) of 5 mA, and a gate-to-source cutoff voltage (Vgs(off)) of -2.5 V. It offers forward transconductance (gfs) of 4500 µS. The component is housed in the UB surface-mount package.

Jfets Feature Summary

• Low noise performance suitable for sensitive RF designs
• Extremely low gate leakage current
• High breakdown voltage variant compared to standard models

Jfets Applications

• Sensitive mixer circuits
• VHF amplifier designs

Jfets Procurement Notes

Verify the specific manufacturer source, as the 2N4416A series originates from Interfet, which has undergone corporate acquisitions. Confirm that the Microchip Technology designation corresponds to the correct Interfet-derived inventory or manufacturing line. Ensure the UB package suffix matches the required surface-mount footprint and verify RoHS compliance status for the specific production batch.

Jfets Selection Notes

Select this component when designing circuits requiring minimal input noise and ultra-low leakage currents. The 2N4416A variant provides higher breakdown voltage compared to the standard 2N4416, making it suitable for applications demanding greater headroom. Consider the UB surface-mount package for automated assembly processes where space constraints exist.

Jfets Part Context

This part belongs to the 2N4416 family of N-channel JFETs originally developed by Interfet. The 'A' suffix denotes a version with enhanced breakdown voltage specifications. These devices are widely recognized in military and high-reliability aerospace sectors due to their hermetic sealing options and stable electrical characteristics over temperature ranges.