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The onsemi 2N5060G is a silicon planar gate thyristor designed for general-purpose switching and rectification applications. It features a three-terminal structure with anode, cathode, and gate terminals, housed in a TO-92 plastic package suitable for through-hole mounting. The device is rated for a repetitive peak forward blocking voltage of 400 V and a non-repetitive peak forward surge current capability of 10 A. It operates within a junction temperature range of -40°C to +125°C, ensuring reliable performance in standard industrial and consumer electronic environments.
Verify the specific suffix 'G' indicates RoHS compliance status according to the manufacturer's latest documentation. Confirm the package type matches the required PCB footprint for through-hole assembly. Ensure the ordering quantity aligns with distributor minimums if applicable. Cross-reference the datasheet revision date to guarantee parameter accuracy against current production standards.
Select this component when a low-cost, general-purpose thyristor is required for moderate current applications up to 10 A surge. Consider the 400 V blocking voltage limit for circuit design safety margins. Evaluate the TO-92 package constraints regarding thermal dissipation compared to higher power packages like TO-220 for continuous load requirements.
The 2N5060 series belongs to a family of standard silicon controlled rectifiers widely used in basic power control applications. The 'G' suffix typically denotes environmental compliance attributes defined by onsemi. This part serves as a fundamental building block for simple phase control and switching tasks in lower power electronics.
Direct replacements include other 2N5060 variants from different manufacturers provided they match the 400 V rating and TO-92 pinout. Verify equivalent surge current ratings and gate trigger characteristics before substitution.