2N5088BU

Single Bipolar Transistors Overview

The onsemi 2N5088BU is a discontinued NPN general-purpose amplifier transistor manufactured by ON Semiconductor. It operates within a collector-emitter voltage of 30 V and supports continuous collector currents up to 100 mA. The device features a DC current gain ranging from 300 to 900 at low currents, with a transition frequency of 50 MHz. Thermal characteristics include a total power dissipation of 625 mW in the TO-92 package and an operating junction temperature range spanning -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for low noise applications suitable for sensitive signal amplification
• Provides high DC current gain across a wide range of collector currents
• Capable of operation over a broad ambient and storage temperature spectrum

Single Bipolar Transistors Applications

• Low noise audio pre-amplifier stages
• General purpose small-signal amplification circuits
• High gain amplifier configurations requiring low input noise

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as this part is officially discontinued. Confirm that the specific ordering suffix matches legacy Fairchild nomenclature standards before integration into new designs. Ensure all electrical parameters align with original datasheet specifications to maintain circuit performance integrity.

Single Bipolar Transistors Selection Notes

Select this component for legacy system maintenance where original low-noise performance is critical. Evaluate thermal management requirements carefully due to the specified power dissipation limits in the TO-92 package. Consider alternative surface-mount equivalents if board space constraints exist or if modern sourcing availability is required for production runs.

Single Bipolar Transistors Part Context

This device belongs to the 2N5088 family originally developed by Fairchild Semiconductor prior to its acquisition by ON Semiconductor. The product line includes complementary PNP variants and surface-mount versions designed for similar low-noise amplifier roles. The BU suffix typically denotes specific packaging or testing variations within the broader series classification.

Single Bipolar Transistors Replacement Considerations

MMBT5088LT1G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 30 V when measured at a collector current of 1.0 mA with the base open.

Does the device support high-frequency operation?

Yes, the device has a transition frequency (fT) of 50 MHz, making it suitable for moderate frequency amplification tasks.

What is the typical noise figure specification?

The noise figure is specified at 3.0 dB when tested at a collector current of 100 µA, a collector-emitter voltage of 5.0 V, and a source resistance of 10 kΩ.