2N5116

Jfets Overview

The Central Semiconductor Corp 2N5116 is a silicon P-channel Junction Field-Effect Transistor (JFET) designed for switching applications. It operates in depletion mode and is housed in a TO-18 metal can package with three pins: Source, Gate, and Drain. The device supports an operating junction temperature range of -65°C to +200°C. Key electrical characteristics include a maximum gate-source voltage of 30V and a power dissipation rating of 500mW at 25°C ambient temperature. For the 2N5116 variant, the drain-source on-resistance (rDS(ON)) is specified as a maximum of 150Ω at ID=1.0mA and VGS=0V. The off-state drain current (ID(OFF)) is limited to 500pA under specific bias conditions.

Jfets Feature Summary

• Designed specifically for high-speed switching applications utilizing silicon P-channel technology.
• Capable of reliable operation across an extended temperature range up to +200°C junction temperature.
• Features low feedback capacitance to support efficient signal isolation and switching performance.

Jfets Applications

• Electronic switching circuits requiring fast turn-on and turn-off times.
• Signal routing and multiplexing systems utilizing JFET characteristics.
• High-temperature electronic environments where standard silicon limits are exceeded.

Jfets Procurement Notes

Verify the specific plating configuration required for your assembly process before ordering. Central Semiconductor offers both Tin/Lead and Lead-Free options. To specify Tin/Lead plating, append the suffix "TIN/LEAD" to the part number. For Lead-Free compliance, use the suffix "PBFREE". Confirm that the selected variant meets your environmental regulations and soldering profile requirements.

Jfets Selection Notes

Select the 2N5116 when a P-channel JFET with a wide operating temperature range is needed. Ensure the circuit design accommodates the maximum ratings of 30V for both Gate-Drain and Gate-Source voltages. Verify that the load current does not exceed the device's power dissipation capabilities within the thermal constraints of the TO-18 package.

Jfets Part Context

The 2N5116 belongs to a family of silicon P-channel JFETs manufactured by Central Semiconductor Corp, which also includes the 2N5114 and 2N5115. These devices share the same physical TO-18 case outline but differ in their electrical parameter bins, such as pinch-off voltage and on-resistance. This component is distinct from other transistor types like BJTs or MOSFETs due to its depletion-mode operation and high input impedance.

Jfets Replacement Considerations

Central Semiconductor has listed the 2N5115 as End of Life with no suggested replacement available. No direct substitute part numbers are officially documented for the 2N5116 in the provided datasheet or product discontinuation notices. Engineers should consult application engineering support for potential alternate sources if this component becomes unavailable.

Jfets FAQ

What is the pinout configuration for the TO-18 package?

The lead code for the TO-18 case is defined as Pin 1 being the Source, Pin 2 being the Gate, and Pin 3 being the Drain.

How does the 2N5116 differ from the 2N5114 and 2N5115?

While all three devices share the same physical package and basic structure, they are distinguished by their electrical characteristic bins. The 2N5116 has specific limits for parameters such as IDSS (5.0 to 25 mA) and VGS(OFF) (1.0 to 4.0 V) that differ from the other variants.

What is the maximum operating junction temperature?

The maximum operating and storage junction temperature (Tj, Tstg) for the 2N5116 is +200°C.