2N5210_J05Z

Overview

The onsemi 2N5210_J05Z is a discontinued NPN general-purpose amplifier transistor designed for low noise and high gain applications. It operates within collector currents ranging from 1 µA to 50 mA. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current limit of 100 mA, and a total device dissipation of 625 mW in the TO-92-3 package. The component features a transition frequency of 30 MHz and supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Engineered for low noise performance suitable for sensitive signal amplification
• Provides high DC current gain across various collector current levels
• Capable of operation at elevated junction temperatures up to 150°C

Applications

• Low noise audio pre-amplifier stages
• General purpose small-signal amplification
• High gain amplifier circuits

Procurement Notes

This specific part number is officially marked as obsolete by the manufacturer. Verify availability through secondary market channels or authorized distributors holding remaining stock. Confirm that the received components match the original Fairchild Semiconductor datasheet specifications, as legacy inventory may vary in packaging or testing standards compared to current production runs.

Selection Notes

Select this component only if the design specifically requires its historical low-noise characteristics and standard TO-92 form factor. Evaluate alternative modern NPN transistors with comparable breakdown voltages and gain bandwidth products if supply continuity is a priority. Ensure the replacement maintains compatibility with existing PCB footprints and thermal management requirements.

Part Context

Originally manufactured by Fairchild Semiconductor, this device was acquired by onsemi during corporate restructuring. The 2N5210 series represents a legacy standard for general-purpose amplification. The J05Z suffix typically denotes specific tape-and-reel or bulk packaging variations handled by distributors, though the core semiconductor characteristics remain consistent with the base 2N5210 specification.

Replacement Considerations

Consult the official datasheet for equivalent MMBT5210 variants which share identical electrical ratings and pinouts. Verify that any substitute component matches the required 50V collector-emitter breakdown and 100mA continuous current limits.