ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 50V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100µA, 5V
- Power - Max：625 mW
- Frequency - Transition：30MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi 2N5210_S00Z is an NPN silicon general-purpose amplifier transistor designed for low-noise applications. It operates within a collector current range of 1 µA to 50 mA. Key electrical specifications include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V and a continuous collector current rating of 100 mA. The device features a DC current gain (hFE) ranging from 200 to 600 at IC = 100 µA, with a transition frequency (fT) of 30 MHz. Thermal characteristics specify a total power dissipation of 625 mW in a TO-92 package and 350 mW in an SOT-23 package. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Engineered for low noise performance suitable for sensitive signal amplification
- Provides high DC current gain across varying collector currents
- Supports general-purpose amplifier functions with wide thermal operating range
Applications
- Low noise audio pre-amplifier stages
- General purpose small-signal amplification circuits
- High gain amplifier designs requiring low input noise
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Confirm component status as obsolete or active through authorized distributors. Ensure compatibility with existing PCB footprints for both TO-92 and SOT-23 variants if applicable. Cross-reference datasheet revisions to validate electrical parameters match design requirements.
Selection Notes
Select this component for designs prioritizing low noise figure and high linearity in small-signal applications. Evaluate thermal resistance limits based on the chosen package style. Consider the transition frequency and current gain requirements relative to the target operating bandwidth. Verify that the collector current ratings align with the maximum expected load conditions in the circuit topology.
Part Context
The 2N5210 is a legacy NPN silicon transistor originally specified by Fairchild Semiconductor, now maintained under the onsemi portfolio. It belongs to the family of general-purpose amplifier transistors intended for low-frequency, low-noise operations. The part number 2N5210_S00Z represents a specific commercial packaging configuration of this standard device type.
Replacement Considerations
Consult official cross-reference lists for verified substitutes such as MMBT5210. Ensure replacement devices match the original pinout configuration and package dimensions. Verify that alternative components meet or exceed the required noise figure, current gain, and breakdown voltage specifications.
