2N5210BU

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-

SKU:94036179e551 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：50nA
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100µA, 5V
Power - Max：625 mW
Frequency - Transition：30MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5210BU

Overview

The onsemi 2N5210BU is an NPN silicon general-purpose amplifier transistor designed for low-noise, high-gain applications. It operates effectively at collector currents ranging from 1 µA to 50 mA. Key electrical characteristics include a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. The device features a DC current gain (hFE) between 200 and 600, with a small-signal current gain bandwidth product (fT) of 30 MHz. Noise performance is specified with a noise figure as low as 2.0 dB under defined test conditions.

Feature Summary

Designed for low-noise, high-gain amplifier applications
Optimized for operation across a wide range of collector currents
Provides stable DC current gain characteristics

Applications

Low-noise audio amplification circuits
General-purpose signal amplification stages
High-gain pre-amplifier designs

Procurement Notes

Verify the specific ordering suffix 'BU' against official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing thermal management requirements, as maximum junction temperature ratings are critical for reliability. Cross-reference datasheet revision history to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when circuit design requires a balance of moderate voltage handling and low noise performance. Evaluate the required collector current against the optimal operating range to ensure minimum noise figures are achieved. Consider the available package options relative to board space constraints and thermal dissipation needs in the target application environment.

Part Context

This component belongs to the family of NPN silicon amplifier transistors historically associated with Fairchild Semiconductor specifications now managed by onsemi. It serves as a standard discrete solution for analog signal processing tasks where integrated operational amplifiers may not be suitable due to power or form factor constraints.

Replacement Considerations

Consult official cross-reference lists for verified substitutes such as the MMBT5210 variant. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit integrity without redesign.