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The 2N5210RLRA is an NPN silicon amplifier transistor manufactured by onsemi. It features a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 50 V. The device is housed in a TO-92 through-hole package with three pins. Key electrical limits include a maximum power dissipation of 625 mW, a maximum collector-base voltage of 50 V, and a maximum emitter-base voltage of 50 V. The component supports a maximum operating frequency of 30 MHz and functions up to a junction temperature of +150 °C.
Verify the specific ordering suffix RLRA against official onsemi documentation to confirm reel packaging specifications. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the full part number with the latest datasheet revision to confirm compliance with current RoHS directives and material declarations before finalizing acquisition.
Select this component when a standard NPN bipolar junction transistor is required for low-power amplification tasks. The TO-92 package facilitates easy integration into through-hole printed circuit board designs. Engineers should evaluate the 100 mA current limit and 50 V voltage rating to ensure compatibility with the target circuit's operational requirements and thermal management constraints.
This component belongs to the family of small-signal NPN silicon transistors produced by onsemi. These devices are commonly utilized in consumer electronics and industrial control systems where reliable linear amplification is necessary. The product line emphasizes standard performance metrics suitable for widespread electronic design applications requiring robust switching or amplifying capabilities.
Consult official cross-reference lists for verified substitutes such as the BC237 or MPS918. Confirm that alternative parts match the required pinout configuration and electrical ratings before implementation.