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Product Detailed Parameters
- Description：25V 500MA 310MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：300nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
- Power - Max：-
- Frequency - Transition：50MHz
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N5226 TRE TIN/LEAD is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and features a through-hole mounting style within a TO-92-3 package. The device supports a collector-emitter voltage of 40 V and a collector-base voltage of 40 V, with an emitter-base voltage rating of 5 V. It handles a continuous collector current of 100 mA and dissipates up to 500 mW of power. The component operates between -65°C and +150°C, offering a gain-bandwidth product of 100 MHz.
Feature Summary
- PNP polarity configuration for signal amplification and switching applications
- High gain-bandwidth product suitable for high-frequency operations
- Wide operating temperature range for diverse environmental conditions
Applications
- General-purpose amplifier circuits
- Electronic switching applications
- Small-signal processing stages
Procurement Notes
Verify the specific ordering suffix required for tin/lead plating compliance when placing orders. Confirm availability status directly with the manufacturer or authorized distributors as inventory levels fluctuate. Ensure the selected packaging format matches production requirements. Cross-reference datasheet specifications against design constraints before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring PNP silicon transistors with moderate voltage ratings and high frequency response. The TO-92-3 package facilitates easy integration into through-hole PCB layouts. Consider the 500 mW power dissipation limit when designing thermal management solutions. Verify that the 40 V voltage ratings align with circuit supply voltages to prevent breakdown.
Part Context
This part belongs to the standard discrete semiconductor transistor category produced by Central Semiconductor Corp. It serves as a fundamental active component in electronic circuits, distinct from integrated circuits or power devices. The 2N5226 designation indicates a specific performance profile within the manufacturer's broad portfolio of small-signal transistors.
Replacement Considerations
Consult official datasheets for pin-compatible alternatives such as the MPSA92 or similar PNP transistors. Verify electrical parameter equivalence, including voltage ratings and current capabilities, before substitution. Packaging compatibility must be confirmed for direct replacement scenarios.
