2N5232A APM TIN/LEAD

$0.21

Description：50V 100MA 625MW TH TRANSISTOR-SM
Series：-

SKU:999d7b4558a6 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：50V 100MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：125mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：30nA
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5232A APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5232A APM TIN/LEAD is a general-purpose NPN silicon transistor housed in a TO-92-3 package. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device has a maximum power dissipation of 500 mW and a transition frequency of 300 MHz. DC current gain (hFE) is specified at a minimum of 110 under standard test conditions. The component supports a junction temperature up to 150°C.

Feature Summary

General-purpose NPN silicon construction for standard switching and amplification tasks
Through-hole TO-92-3 leaded package design
High-frequency operation capability with 300 MHz transition frequency

Applications

General-purpose signal amplification circuits
Low-power switching applications
Audio pre-amplifier stages

Procurement Notes

Verify the specific ordering suffix 'APM TIN/LEAD' against official manufacturer documentation to confirm plating specifications and tin whisker mitigation status. Ensure the requested variant matches the exact electrical parameters required for the target application, as surface treatments can affect solderability and reliability in high-reliability environments.

Selection Notes

Select this component when a through-hole NPN transistor with moderate voltage ratings and low power dissipation is required. The TO-92-3 package facilitates easy prototyping and manual assembly. Consider the tin/lead plating option if compatibility with legacy soldering processes or specific environmental regulations is necessary.

Part Context

This part belongs to the family of small-signal NPN transistors manufactured by Central Semiconductor Corp. These devices are commonly used in consumer electronics and industrial control systems where reliable performance in low-current applications is essential. The TO-92-3 package is a standard industry form factor for these types of discrete semiconductors.