2N5232A TRE TIN/LEAD

2N5232A TRE TIN/LEAD

$0.21
  • Description:50V 100MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:8b0b8516bed5 Category: Brand:

  
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Product Detailed Parameters

  • Description:50V 100MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:125mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5232A TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5232A TRE TIN/LEAD is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. The device dissipates up to 625 mW of power and operates within a junction temperature range of -65°C to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 2 mA and 5 V, a collector cutoff current of 30 nA maximum, and a saturation voltage of 125 mV at 1 mA base and 10 mA collector currents.

Feature Summary

  • Low noise performance suitable for sensitive signal applications
  • High DC current gain ensuring efficient amplification
  • Robust thermal stability across extended operating temperatures

Applications

  • General-purpose small-signal amplification
  • Switching circuits requiring low noise
  • Audio pre-amplifier stages

Procurement Notes

Verify that the specific ordering suffix 'TRE TIN/LEAD' matches the required lead-free or tin-lead plating specifications for your assembly process. Confirm the package type remains TO-92-3 and check RoHS compliance status against project requirements. Ensure the manufacturer is Central Semiconductor Corp to guarantee parameter consistency.

Selection Notes

Select this component when a low-noise NPN BJT with moderate voltage ratings is required. Compare hFE minimums and saturation voltages against circuit requirements. Consider the TO-92-3 package constraints for PCB layout and thermal management relative to higher-power alternatives.

Part Context

This part belongs to the Central Semiconductor 2N5232A family of general-purpose NPN transistors. Variants such as PBFREE and APM exist, differing primarily in packaging and plating materials while maintaining identical electrical characteristics. The TRE suffix typically denotes a specific tape-and-reel or bulk packaging configuration.

Replacement Considerations

Direct substitutes include other 2N5232A variants from Central Semiconductor Corp, such as 2N5232A PBFREE or 2N5232A APM TIN/LEAD. Cross-manufacturer replacements must match the 50V Vceo, 100mA Ic, and TO-92-3 package form factor.

2N5232A TRE TIN/LEAD2N5232A TRE TIN/LEAD
$0.21
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