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The Central Semiconductor Corp 2N5232A TRE TIN/LEAD is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. The device dissipates up to 625 mW of power and operates within a junction temperature range of -65°C to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 2 mA and 5 V, a collector cutoff current of 30 nA maximum, and a saturation voltage of 125 mV at 1 mA base and 10 mA collector currents.
Verify that the specific ordering suffix 'TRE TIN/LEAD' matches the required lead-free or tin-lead plating specifications for your assembly process. Confirm the package type remains TO-92-3 and check RoHS compliance status against project requirements. Ensure the manufacturer is Central Semiconductor Corp to guarantee parameter consistency.
Select this component when a low-noise NPN BJT with moderate voltage ratings is required. Compare hFE minimums and saturation voltages against circuit requirements. Consider the TO-92-3 package constraints for PCB layout and thermal management relative to higher-power alternatives.
This part belongs to the Central Semiconductor 2N5232A family of general-purpose NPN transistors. Variants such as PBFREE and APM exist, differing primarily in packaging and plating materials while maintaining identical electrical characteristics. The TRE suffix typically denotes a specific tape-and-reel or bulk packaging configuration.
Direct substitutes include other 2N5232A variants from Central Semiconductor Corp, such as 2N5232A PBFREE or 2N5232A APM TIN/LEAD. Cross-manufacturer replacements must match the 50V Vceo, 100mA Ic, and TO-92-3 package form factor.