SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor 2N5306 PBFREE is a single NPN Darlington transistor designed for switching and amplification applications. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum DC collector current of 300 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device features an emitter-base voltage (VEBO) of 4 V, a power dissipation rating of 625 mW, and a gain-bandwidth product (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix when requesting components. Use the suffix PBFREE for lead-free plated devices or TIN/LEAD for tin/lead plated versions. Availability of specific plating types must be confirmed directly with a Central Semiconductor sales representative prior to finalizing orders.
Select this component for applications requiring high input impedance and significant current gain from a low base drive current. The TO-92-3 package is suitable for through-hole mounting on standard PCBs. Ensure the design accounts for the 625 mW power dissipation limit and the 40 V voltage ratings to maintain reliable operation under expected load conditions.
This part belongs to the Central Semiconductor discrete semiconductor portfolio, specifically within the transistors category. The manufacturer specializes in providing various forms of discrete products, including surface mount, through-hole, and bare die options. The 2N5306 represents their silicon-based NPN Darlington transistor offerings.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official datasheets for pin-compatible alternatives that match the required voltage, current, and gain specifications.