2N5306 TIN/LEAD

Overview

The Central Semiconductor 2N5306 is a silicon NPN epitaxial planar Darlington transistor housed in a TO-92 case. It features a collector-emitter voltage of 25 V, a continuous collector current of 300 mA, and power dissipation ratings of 625 mW at ambient temperature and 1.5 W with case cooling. The device operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 7,000 at 2.0 mA and a transition frequency (fT) of 60 MHz.

Feature Summary

• High DC current gain suitable for sensitive amplifier applications
• Epitaxial planar silicon construction for reliability
• Through-hole TO-92 package configuration

Applications

• High gain amplifier circuits
• Switching applications requiring high input impedance
• Driver stages for low-power loads

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet specifies that adding the suffix TIN/LEAD requests tin/lead plated devices, while PBFREE indicates lead-free plating. Confirm the exact suffix matches your regulatory requirements and assembly specifications before placing orders to ensure correct material composition.

Selection Notes

Select this component for designs requiring high current gain in a small through-hole package. Compare the 25 V collector-emitter voltage against circuit supply rails. Evaluate thermal management needs based on the 625 mW ambient dissipation limit versus the 1.5 W case-cooled rating. Ensure the 300 mA continuous current capability meets load demands.

Part Context

This part belongs to the Central Semiconductor 2N5306/2N5308 series of silicon NPN Darlington transistors. While sharing similar physical packages and basic structures, the 2N5306 is distinguished by its lower 25 V voltage rating compared to the 40 V rating of the 2N5308. Both are designed for high-gain applications using epitaxial planar technology.

Replacement Considerations

Public confirmed substitute part numbers: 2N5308.