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The Central Semiconductor Corp 2N5306 TRE PBFREE is a PNP Darlington transistor designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current of 500 mA. The device offers high DC current gain, with a minimum hFE of 10,000 at IC = 10 mA. Power dissipation is rated at 625 mW, and it operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix 'TRE' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure the TO-92-3 footprint matches the target PCB design. Check for any lead-free plating specifications required by the assembly process.
Select this component when high current gain is critical to minimize base drive requirements. Consider the 40 V voltage rating against circuit supply limits. Evaluate the 625 mW power dissipation limit under worst-case thermal conditions. Compare against alternative PNP Darlington transistors if different pinouts or higher voltage ratings are needed.
This part belongs to the Central Semiconductor bipolar transistor family, specifically the Darlington configuration series. It serves as a discrete solution for applications needing high sensitivity and switching capability without integrated driver circuits. The TO-92-3 package provides a standard form factor for prototyping and general-purpose electronics.
Consult official substitution guides for equivalent PNP Darlington transistors with matching VCEO and IC ratings. Verify pinout compatibility before replacing to avoid circuit damage. Ensure thermal characteristics align with the original design constraints.