2N5306 TRE PBFREE

2N5306 TRE PBFREE

$0.22
  • Description:300MA 25V TH TRANSISTOR-SMALL SI
  • Series:-

SKU:eac95b34a6ea Category: Brand:

  
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Product Detailed Parameters

  • Description:300MA 25V TH TRANSISTOR-SMALL SI
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:7000 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:60MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5306 TRE PBFREE

Overview

The Central Semiconductor Corp 2N5306 TRE PBFREE is a PNP Darlington transistor designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current of 500 mA. The device offers high DC current gain, with a minimum hFE of 10,000 at IC = 10 mA. Power dissipation is rated at 625 mW, and it operates within a temperature range of -65 °C to +150 °C.

Feature Summary

  • High current gain capability suitable for amplification applications
  • Robust thermal performance with extended operating temperature range
  • Through-hole construction for reliable mechanical mounting

Applications

  • High-gain amplifier circuits
  • Switching applications requiring low input drive current
  • Interface circuits between logic levels and higher power loads

Procurement Notes

Verify the specific suffix 'TRE' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure the TO-92-3 footprint matches the target PCB design. Check for any lead-free plating specifications required by the assembly process.

Selection Notes

Select this component when high current gain is critical to minimize base drive requirements. Consider the 40 V voltage rating against circuit supply limits. Evaluate the 625 mW power dissipation limit under worst-case thermal conditions. Compare against alternative PNP Darlington transistors if different pinouts or higher voltage ratings are needed.

Part Context

This part belongs to the Central Semiconductor bipolar transistor family, specifically the Darlington configuration series. It serves as a discrete solution for applications needing high sensitivity and switching capability without integrated driver circuits. The TO-92-3 package provides a standard form factor for prototyping and general-purpose electronics.

Replacement Considerations

Consult official substitution guides for equivalent PNP Darlington transistors with matching VCEO and IC ratings. Verify pinout compatibility before replacing to avoid circuit damage. Ensure thermal characteristics align with the original design constraints.

2N5306 TRE PBFREE2N5306 TRE PBFREE
$0.22
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