2N5306 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5306 TRE TIN/LEAD is a single NPN Darlington transistor designed for through-hole mounting in TO-92-3 packages. It supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 300 mA. The device features a power dissipation rating of 625 mW and a DC current gain (hFE) minimum of 7000 at 2 mA. Operating temperatures range from -65°C to +150°C, with a transition frequency of 60 MHz.

Feature Summary

• High DC current gain suitable for sensitive switching applications
• Wide operating temperature range for harsh environments
• Through-hole construction for standard PCB integration

Applications

• General-purpose switching circuits
• Low-level signal amplification
• Driver stages for relays or LEDs

Procurement Notes

Verify the specific suffix TRE against official datasheets to confirm lead-free status and packaging type. Confirm RoHS compliance requirements with the manufacturer before ordering. Ensure the tin/lead variant meets environmental regulations for the target deployment region. Cross-reference pinouts with equivalent parts if substituting.

Selection Notes

Select this component when high current gain is required for low-input drive signals. The TO-92-3 package limits thermal performance compared to larger cases. Verify that the 625 mW dissipation rating accommodates the expected load conditions without excessive heat sinking. Consider the 40 V breakdown limit for circuit voltage headroom.

Part Context

This part belongs to the 2N5306 series of NPN Darlington transistors manufactured by Central Semiconductor Corp. It is functionally similar to other general-purpose Darlington pairs but offers specific gain and voltage characteristics defined by the manufacturer's specifications for this particular model number.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for compatible equivalents.