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The onsemi 2N5307 is an NPN epitaxial silicon transistor designed for general-purpose amplifier applications requiring extremely high current gain at currents up to 1.0A. It features a collector-emitter voltage of 40V, continuous collector current of 1.2A, and total device dissipation of 625mW. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.
Verify the manufacturer origin, as this part was originally produced by Fairchild Semiconductor. Confirm the specific package variant (TO-92) matches your board layout requirements. Ensure the sourcing channel provides valid documentation for the epitaxial silicon construction and absolute maximum ratings before integration into production designs.
Select this component when circuit designs demand high DC current gain in a low-power, through-hole configuration. The 40V breakdown voltage and 1.2A continuous current rating define its operational limits. Consider thermal management capabilities given the 625mW dissipation limit in the standard TO-92 housing for sustained operation.
The 2N5307 belongs to the family of NPN general-purpose transistors historically manufactured by Fairchild Semiconductor. It serves as a discrete semiconductor solution for analog and digital switching tasks where moderate voltage handling and high gain are prioritized over high-frequency performance or extreme power dissipation.
Consult the datasheet for characteristics similar to the MPSA14.