2N5307

2N5307

  • Description:TRANS NPN DARL 40V 1.2A TO-92-3
  • Series:-

SKU:5f960ca8dcfa Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN DARL 40V 1.2A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1.2 A
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5307

Overview

The onsemi 2N5307 is an NPN epitaxial silicon transistor designed for general-purpose amplifier applications requiring extremely high current gain at currents up to 1.0A. It features a collector-emitter voltage of 40V, continuous collector current of 1.2A, and total device dissipation of 625mW. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.

Feature Summary

  • Designed for applications requiring extremely high current gain at currents up to 1.0A
  • Epitaxial silicon construction for reliable performance
  • Suitable for general-purpose amplifier circuits

Applications

  • General-purpose amplification
  • High current gain switching
  • Low-power signal processing

Procurement Notes

Verify the manufacturer origin, as this part was originally produced by Fairchild Semiconductor. Confirm the specific package variant (TO-92) matches your board layout requirements. Ensure the sourcing channel provides valid documentation for the epitaxial silicon construction and absolute maximum ratings before integration into production designs.

Selection Notes

Select this component when circuit designs demand high DC current gain in a low-power, through-hole configuration. The 40V breakdown voltage and 1.2A continuous current rating define its operational limits. Consider thermal management capabilities given the 625mW dissipation limit in the standard TO-92 housing for sustained operation.

Part Context

The 2N5307 belongs to the family of NPN general-purpose transistors historically manufactured by Fairchild Semiconductor. It serves as a discrete semiconductor solution for analog and digital switching tasks where moderate voltage handling and high gain are prioritized over high-frequency performance or extreme power dissipation.

Replacement Considerations

Consult the datasheet for characteristics similar to the MPSA14.

2N53072N5307

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