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The 2N5308 APM PBFREE is an NPN Darlington transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a maximum DC collector current of 300 mA and dissipates up to 625 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 7000 at 2 mA and 5 V, and a transition frequency (fT) of 60 MHz. It operates within a temperature range of -65°C to +150°C and is housed in a TO-92-3 through-hole package.
Verify the specific suffix designation when ordering to ensure compliance with lead-free requirements. Confirm that the TO-92-3 through-hole package matches the target PCB footprint. Cross-reference the manufacturer part number against official datasheets to validate electrical parameters before integration into production designs.
Select this component for applications requiring high input impedance and significant current amplification from low base drive currents. Ensure the circuit design accounts for the 40 V voltage limits and 300 mA current capacity. Consider the thermal management requirements associated with the 625 mW power dissipation limit in enclosed environments.
This device belongs to the 2N5308 series of NPN Darlington transistors produced by Central Semiconductor. It is designed as a discrete semiconductor solution for general-purpose switching and amplification tasks. The product line emphasizes reliability in through-hole configurations for industrial and commercial electronics.
Direct substitutes may include other NPN Darlington transistors with comparable 40 V ratings and similar pinouts, such as the MPSA13 or MPSA42, provided their current and gain specifications meet the circuit requirements.