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Product Detailed Parameters
- Description：TRANS NPN 100V 20A TO-61
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：20 A
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 10mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：87 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package：TO-61
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5315 is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for general-purpose amplification and switching applications. It features a maximum drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of 25 V. The device supports a continuous drain current of 10 mA and offers a typical zero-gate-voltage drain current ranging from 0.5 to 6.0 mA. With a power dissipation rating of 300 mW, it operates within a temperature range of -65°C to +175°C.
Feature Summary
- Utilizes silicon planar technology for stable electrical characteristics
- Provides high input impedance suitable for low-noise preamplifier stages
- Capable of operation in extended industrial temperature environments
Applications
- Low-noise audio preamplifiers
- High-impedance buffer circuits
- Precision analog signal conditioning
Procurement Notes
Verify the specific manufacturer datasheet for exact pinout configurations and absolute maximum ratings before integration. Confirm RoHS compliance status and environmental declarations directly with the supplier or official documentation. Ensure thermal management strategies align with the specified power dissipation limits under all operating conditions.
Selection Notes
Select this component when a JFET with moderate voltage handling and low leakage current is required. Compare the zero-gate-voltage drain current specifications against circuit biasing requirements. Evaluate package options such as TO-92 or metal can styles based on mechanical constraints and thermal performance needs.
Part Context
This part belongs to the family of discrete semiconductor junction field-effect transistors manufactured by Microchip Technology. These devices are engineered for linear operation regions, distinguishing them from digital switching transistors. They serve as fundamental building blocks in analog electronics where high input impedance and low noise figures are critical design parameters.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ significantly in pinch-off voltage or noise characteristics.
