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Product Detailed Parameters
- Description：TRANS PNP 100V 10A TO-61
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：10:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：87 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package：TO-61
- Grade：-
- Qualification：-
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Overview
The 2N5319 is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 100 V. The device has a maximum power dissipation rating of 87 W. It operates within a temperature range of -65°C to 200°C (TJ). The component utilizes a stud mount package configuration, specifically TO-61, designed for high-power applications requiring robust thermal management.
Feature Summary
- High current handling capability with a 10 A maximum collector current rating
- Robust voltage tolerance supporting up to 100 V collector-emitter breakdown
- Extended thermal operating range suitable for demanding environments
Applications
- Power switching circuits
- Amplifier stages in audio or RF systems
- Industrial motor control interfaces
Procurement Notes
Verify the manufacturer origin carefully, as the 2N5319 designation appears across multiple vendors including Texas Instruments and unclassified sources. Confirm the specific package type matches your thermal design requirements. Ensure the datasheet aligns with Microchip Technology specifications to avoid functional mismatches from generic equivalents.
Selection Notes
Select this component when high current capacity and moderate voltage blocking are required in a stud-mount form factor. Consider the thermal resistance characteristics inherent to the TO-61 package for heat sink integration. Validate that the 87 W power dissipation limit meets the system's continuous load requirements under expected ambient conditions.
Part Context
This part belongs to the category of single bipolar transistors, specifically power BJTs. It serves as a discrete semiconductor switch or amplifier element. The 2N5319 designation represents a legacy standard often cross-referenced with other manufacturers' equivalent parts, though electrical characteristics may vary slightly between source providers.
Replacement Considerations
Cross-reference with other manufacturers offering NPN power transistors in TO-61 packages. Verify pinout compatibility and thermal performance metrics before substitution. Note that some sources list Texas Instruments variants, requiring careful comparison of absolute maximum ratings.
