2N5320

Overview

The 2N5320 is a silicon epitaxial planar NPN transistor housed in a hermetic TO-39 metal case. It is designed for high-voltage medium power applications, featuring low collector-emitter saturation voltage and a current gain range of 30 to 130 at VCE=4V and IC=0.5A. The device supports a maximum collector current of 2A and a breakdown voltage of 75V, with a power dissipation rating up to 10W.

Feature Summary

• Hermetically sealed TO-39 metal package
• Low collector-emitter saturation voltage
• High current gain capability

Applications

• Medium power amplifier circuits
• High-frequency switching applications
• Driver stage implementations

Procurement Notes

Verify the manufacturer source carefully, as the 2N5320 designation is used by multiple vendors including STMicroelectronics and Central Semiconductor. Confirm that the specific unit matches the required hermetic TO-39 package and electrical specifications before procurement.

Selection Notes

Select this component for applications requiring robust medium-power handling and high reliability due to its metal case construction. Ensure the circuit design accommodates the 75V breakdown limit and 2A current capacity while managing thermal dissipation within the specified operating temperature range.

Part Context

This part belongs to the standard NPN silicon transistor family, often paired with complementary PNP types like the 2N5322. It serves as a fundamental discrete semiconductor device for analog and digital signal processing tasks where durability and performance are critical.

Replacement Considerations

Direct substitutes include the 2N5321 (matched pair) or equivalent NPN transistors in TO-39 packages such as the 2N3053, provided voltage and current ratings meet the application requirements.