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The Central Semiconductor 2N5320 PBFREE is an NPN silicon power switching transistor manufactured via epitaxial planar process. It operates within a collector-emitter voltage (VCEO) of 75 V and supports a continuous collector current of 2.0 A. The device dissipates up to 10 W of power with a junction temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 500 mA, a transition frequency (fT) of 50 MHz, and a typical turn-on time of 80 ns under specified test conditions.
Verify that the ordering suffix matches the required plating specification. The 'PBFREE' designation indicates lead-free plating compliance. Confirm the specific package type and mechanical outline dimensions against the target PCB footprint requirements before finalizing procurement orders.
Select this component when designs require robust power handling capabilities combined with fast switching speeds. The TO-39 metal can package provides superior thermal dissipation compared to plastic alternatives. Ensure adequate heat sinking is implemented to maintain junction temperatures within the specified operational limits during continuous load cycles.
This device belongs to the 2N5320 series of complementary silicon power transistors produced by Central Semiconductor Corp. The series includes both NPN (2N5320/2N5321) and PNP (2N5322/2N5323) variants, offering matched performance characteristics for balanced circuit design in power electronics applications.
Direct functional substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' equivalents.