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The onsemi 2N5320 is a PNP epitaxial silicon power transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 60 V and supports a continuous collector current of up to 4 A. The device is housed in a TO-3 metal can package, providing robust thermal dissipation capabilities with a maximum power dissipation rating of 10 W at case temperature. It operates within a junction temperature range of -55°C to +175°C, ensuring reliability in demanding environments.
Verify the specific manufacturer source, as the 2N5320 designation is a military-style part number historically produced by multiple vendors including Microchip and others. Confirm RoHS compliance status and exact datasheet revision, as specifications may vary between original MIL-spec versions and modern commercial equivalents. Ensure the supplier provides traceable documentation matching the required electrical characteristics.
Select this component when a PNP transistor with 60 V breakdown and 4 A current handling is required in a through-hole metal package. Consider the TO-3 form factor for applications needing direct chassis mounting or superior thermal management compared to plastic packages. Verify that the required DC current gain meets the specific circuit drive requirements.
The 2N5320 belongs to the family of general-purpose high-power NPN/PNP transistors, often paired with the 2N5321 (NPN counterpart). These devices are legacy parts originally defined by military standards but remain available from various semiconductor manufacturers for replacement and industrial design purposes.
Direct substitutes include the 2N5321 if an NPN configuration is acceptable, or other generic PNP power transistors like the 2N3055 if voltage ratings allow. Verify pinout compatibility and thermal resistance values before substituting.