2N5322

Overview

The Microchip Technology 2N5322 is a PNP silicon epitaxial planar power transistor housed in a JEDEC TO-39 metal case. It is designed for high-voltage medium-power applications, featuring a collector-emitter breakdown voltage of 75 V and a continuous collector current rating of 2 A. The device utilizes an epitaxial planar process for reliable performance in switching and amplification circuits.

Feature Summary

• PNP polarity configuration suitable for complementary pairs
• Epitaxial planar construction for robustness
• Metal TO-39 package for thermal management

Applications

• High-voltage medium-power amplification
• Power switching circuits
• Complementary transistor pairs

Procurement Notes

Verify the manufacturer designation carefully, as the 2N5322 part number is historically associated with Central Semiconductor and STMicroelectronics. Confirm that the specific lot or datasheet provided by Microchip Technology explicitly lists this part number to ensure authenticity and correct electrical specifications before procurement.

Selection Notes

Select this component for applications requiring a PNP silicon transistor with a 75 V collector-emitter breakdown and 2 A current handling capability. Ensure the circuit design accommodates the TO-39 metal package form factor and verify thermal dissipation requirements align with the device's power ratings.

Part Context

The 2N5322 belongs to a family of complementary silicon power transistors, often paired with NPN counterparts like the 2N5320. Manufactured via epitaxial planar processes, these devices are standardized for use in general-purpose high-voltage switching and linear amplifier applications across various industrial electronics.

Replacement Considerations

Direct substitutes include the 2N5323 (60 V variant) from STMicroelectronics or equivalent PNP transistors from Central Semiconductor Corp. Verify pinout compatibility and voltage/current margins when cross-referencing with other manufacturers' versions of the 2N5322.