2N5322 PBFREE

$4.67

Description：TRANS PNP 75V 2A TO-39
Series：-

SKU:0dbc2966a350 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 75V 2A TO-39
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：75 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 500mA, 4V
Power - Max：10 W
Frequency - Transition：50MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

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2N5322 PBFREE

Overview

The Central Semiconductor 2N5322 PBFREE is a PNP silicon power switching transistor manufactured via epitaxial planar process. It features a collector-base voltage of 75 V, collector-emitter voltage of 50 V, and continuous collector current of 2.0 A. Power dissipation reaches 10 W at 25°C case temperature. The device operates within a junction temperature range of -65 to +200 °C. DC current gain (hFE) ranges from 40 to 250 at 500 mA. Saturation voltage is 0.7 V max at 500 mA. Turn-on time is 100 ns and turn-off time is 1.0 μs under specified test conditions.

Feature Summary

Complementary PNP silicon power transistor designed for amplifier and switching applications
High thermal stability with extended operating junction temperature up to +200 °C
Robust current handling capability with 2.0 A continuous collector current rating

Applications

Power amplifier circuits
General purpose switching applications
Complementary pairs with 2N5320 series devices

Procurement Notes

Verify the specific ordering suffix required for plating configuration. The PBFREE designation indicates lead-free plating. Tin/Lead plated versions require the TIN/LEAD suffix. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation before finalizing procurement specifications.

Selection Notes

Select this component when a PNP silicon switching transistor with 2.0 A current capacity and 50 V collector-emitter breakdown is required. Ensure the application demands a TO-39 metal can package. Verify that the thermal management design accommodates the 17.5 °C/W junction-to-case thermal resistance for optimal performance at the rated 10 W power dissipation level.

Part Context

This device belongs to the 2N5320-2N5323 complementary series of silicon power transistors. The 2N5322 serves as the PNP counterpart to the NPN 2N5320. Both are manufactured using epitaxial planar technology. The series is intended for use in amplifier and switching topologies requiring matched complementary characteristics.