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The 2N5326 is an NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It is housed in a TO-111 stud-mount package, designed for high-power applications requiring robust thermal management and reliable switching performance. The device features a collector-emitter voltage rating of 80 V and a continuous collector current capacity of 5 A. With a maximum power dissipation of 30 W, it supports operation across a wide temperature range from -65°C to +200°C, ensuring stability in demanding industrial environments.
Verify the manufacturer origin carefully, as historical production involved multiple entities including Motorola. Confirm the specific datasheet version aligns with your design requirements. Ensure the TO-111 package compatibility matches your existing thermal interface solutions. Check for any ordering suffix variations that may indicate different testing criteria or packaging options before finalizing procurement.
Select this component when high current handling at moderate voltage levels is required. The TO-111 package necessitates specific mounting hardware for effective heat sinking. Consider the thermal resistance characteristics relative to your enclosure design. This transistor is suitable for applications where long-term reliability under high thermal stress is critical.
The 2N5326 belongs to the family of NPN silicon power transistors historically produced by Motorola and now managed by Microchip Technology. It serves as a legacy component often found in established industrial designs. Its specifications bridge the gap between standard signal transistors and higher-power devices, making it a staple in older but still functional power electronics architectures.
Potential substitutes include the 2N5002, 2N5004, and 2N5284. Verify pinout compatibility and thermal characteristics before substitution. The 2N3850 is also referenced as an equivalent option.