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Product Detailed Parameters
- Description：TRANS PNP 80V 2A TO-5AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5AA
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5333 is a PNP silicon power transistor manufactured using an epitaxial planar process. It is housed in a hermetically sealed TO-5 metal can package (TO-205AA). The device features a collector-emitter breakdown voltage of 80V and a collector current rating of 2.0A. Maximum power dissipation is rated at 1W. Key electrical characteristics include a collector-base breakdown voltage of 100V and an emitter-base breakdown voltage of 6.0V. The component is designed for through-hole mounting.
Feature Summary
- Hermetically sealed metal case construction
- Epitaxial planar silicon process
- Low saturation voltage capability
- Fast switching performance
Applications
- Power amplifier circuits
- High speed switching applications
Procurement Notes
Verify the manufacturer origin carefully, as the 2N5333 designation is used by multiple vendors including Central Semiconductor and New Jersey Semi-Conductor. Confirm that the specific unit received matches the Microchip Technology part number and includes the required hermetic sealing specifications. Ensure the TO-5 metal can package type aligns with your board layout requirements before finalizing procurement orders.
Selection Notes
Select this component when high reliability and environmental sealing are required for PNP switching or amplification tasks. The TO-5 metal package provides superior thermal and physical protection compared to plastic alternatives. Consider the 80V collector-emitter voltage limit and 2.0A current capacity to ensure adequate headroom for the intended circuit load and operating conditions.
Part Context
This device belongs to the family of bipolar junction transistors (BJT) utilizing PNP silicon technology. It serves as a discrete power component within electronic systems requiring robust switching capabilities. The hermetically sealed metal construction distinguishes it from standard commercial-grade plastic packaged transistors, targeting applications demanding higher durability.
Replacement Considerations
Direct substitutes may include parts from other manufacturers such as Central Semiconductor or New Jersey Semi-Conductor offering identical 2N5333 specifications. Verify pinout compatibility and hermetic sealing requirements when cross-referencing equivalent components from different suppliers.
