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The Central Semiconductor Corp 2N5336 TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage (VCEO) of 100 V and a collector-base voltage (VCBO) of 100 V, with an emitter-base breakdown voltage (VEBO) of 5 V. The device supports a continuous collector current of 800 mA and dissipates up to 625 mW of power. Its transition frequency (fT) is rated at 100 MHz, ensuring adequate performance for switching applications. The component operates within a temperature range of -65 °C to +150 °C and includes a minimum DC current gain (hFE) of 40 at specified test conditions.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin-lead composition requirements. Ensure the selected variant matches the required packaging format, such as bulk or ammo pack, for your assembly process. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Select this component when a PNP transistor with 100 V breakdown and 800 mA current capacity is required. Consider the 625 mW power dissipation limit and ensure adequate heat sinking if operating near maximum ratings. Verify that the TO-92-3 package fits the available PCB real estate and that the 100 MHz transition frequency meets the circuit's speed requirements.
This part belongs to the standard discrete semiconductor product line manufactured by Central Semiconductor Corp. It is classified under bipolar junction transistors and utilizes silicon technology. The component is widely used in electronic designs requiring reliable PNP switching functionality in compact through-hole configurations.
Consult official substitution guides for equivalent PNP transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.