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The Microchip Technology 2N5336 is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 20A. The device has a power dissipation capacity of 5W and a gain-bandwidth product of 30 MHz. It operates within a temperature range of -65°C to +200°C, with a collector-emitter saturation voltage of 1.2V.
Verify the specific datasheet revision and package configuration before procurement. Confirm that the required current and voltage ratings align with the system design constraints. Ensure compatibility with existing thermal management solutions given the power dissipation characteristics. Check for any recent product change notifications regarding manufacturing updates.
Select this component when a robust NPN BJT with high current capacity is needed. Consider the 20A rating and 80V breakdown voltage for appropriate load matching. Evaluate thermal requirements carefully due to the 5W dissipation limit. Compare against alternative transistors if lower saturation voltage or higher frequency response is required.
The 2N5336 belongs to the family of general-purpose power BJTs manufactured by Microchip Technology. It utilizes silicon technology and is packaged for through-hole installation. This component serves as a discrete solution for power management tasks where integrated circuits may not provide sufficient current handling or ruggedness.
Consult official substitution guides for equivalent part numbers. Verify pinout compatibility and electrical parameter overlaps before replacing the component in an existing design.