2N5337

$10.54

Description：NPN TRANSISTOR
Series：*

SKU:87978e1debb0 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：NPN TRANSISTOR
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2N5337

Overview

The 2N5337 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for through-hole mounting, it supports a maximum DC collector current of 5 A and a collector-emitter voltage (VCEO) of 80 V. The device features a power dissipation rating of 6 W and a gain-bandwidth product (fT) of 30 MHz. It operates within a temperature range of -65 °C to +200 °C, with a collector-emitter saturation voltage of 1.2 V.

Feature Summary

High-power handling capability with 5 A continuous collector current support
Extended thermal operation range up to 200 °C
Integrated auto-discharge functionality for safety in specific regulator configurations

Applications

Power switching circuits requiring high current capacity
Linear regulation stages in portable consumer electronics
Low dropout regulator (LDO) implementations

Procurement Notes

Verify the exact datasheet version before integration, as Product Change Notifications (PCNs) may alter physical or electrical characteristics. Confirm that the through-hole bulk packaging aligns with your assembly process. Ensure the supplier provides traceability documentation consistent with Microchip Technology standards. Cross-reference the Mouser part number 494-2N5337 for accurate sourcing channels.

Selection Notes

Select this component when designing circuits requiring robust NPN power switching with high thermal tolerance. The 80 V breakdown voltage suits moderate voltage applications, while the 6 W dissipation rating allows for efficient heat management without excessive heatsinking. Consider the 30 MHz bandwidth for frequency response requirements in amplifier or switching topologies.

Part Context

This device belongs to Microchip Technology's discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor (BJT) category. It serves as a fundamental active component for power control and signal amplification tasks. The part is distinct from the MIC5337 linear regulator series, sharing only numerical similarity in the manufacturer's catalog structure.