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Product Detailed Parameters
- Description：100V 5A 6W TH TRANSISTOR-BIPOLAR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 2A, 2V
- Power - Max：6 W
- Frequency - Transition：30MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N5338 TIN/LEAD is a PNP Darlington transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 10 V. The device supports a continuous collector current of 500 mA and dissipates up to 625 mW of power. It operates within a temperature range of -65 °C to +150 °C. The minimum DC current gain (hFE) is specified as 10,000 at 10 mA and 5 V, with a transition frequency (fT) of 125 MHz.
Feature Summary
- High DC current gain capability for sensitive signal amplification
- Wide operating temperature range suitable for harsh environments
- Robust voltage ratings for reliable switching applications
Applications
- High-gain amplifier circuits
- Switching applications requiring high input impedance
- Driver stages for relay or motor control
Procurement Notes
Verify the specific ordering suffix required for tin/lead plating when placing orders. Confirm that the requested component matches the exact part number and manufacturer specifications. Ensure compliance with relevant environmental regulations regarding lead content if applicable to the end application. Cross-reference datasheets for any recent updates to electrical parameters or packaging details before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high current gain in a compact through-hole package. Consider the 60 V voltage ratings and 500 mA current capacity against circuit requirements. Evaluate the thermal performance given the 625 mW power dissipation limit. Compare the 125 MHz transition frequency against signal bandwidth needs. Ensure the TO-92-3 footprint fits the PCB layout constraints.
Part Context
This component belongs to the MPSA series of Darlington transistors manufactured by Central Semiconductor. It shares similar structural characteristics with other devices in this family, offering high gain and moderate power handling in standard through-hole packages. The series is designed for general-purpose amplification and switching tasks in discrete semiconductor applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative Darlington transistors based on pinout, voltage ratings, and gain specifications before substitution.
