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The Microchip Technology 2N5339 is a military-grade NPN power bipolar junction transistor (BJT) housed in a TO-39 metal can package. It supports a maximum collector current of 5 A and a collector-emitter breakdown voltage of 100 V. The device dissipates up to 1 W of power and operates within a junction temperature range of -65°C to +200°C. Key electrical characteristics include a DC current gain of at least 60 at 2 A, with a maximum saturation voltage of 1.2 V at 5 A.
Verify the specific ordering suffix against the official datasheet to confirm compliance with MIL-PRF-19500/560 requirements. Ensure the procurement documentation explicitly states the military grade status, as commercial variants may lack the necessary environmental testing and traceability required for defense specifications.
Select this component when a hermetically sealed NPN transistor is required for extreme temperature environments. The TO-39 package provides superior thermal management compared to plastic packages. Verify that the 100 V breakdown voltage and 5 A current limits align with the circuit's peak operational demands.
The 2N5339 belongs to the legacy military BJT family produced by Microchip Technology. It serves as a direct replacement for older Mil-Spec designs. The part is distinct from commercial equivalents due to its rigorous screening processes and guaranteed performance under harsh conditions defined by defense industry standards.
JAN2N5339 is a confirmed public substitute offering identical electrical specifications and military qualification.