2N5339

Description：TRANS NPN 100V 5A TO-39
Series：-

SKU:8d7fef15d5c8 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 100V 5A TO-39
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 2A, 2V
Power - Max：6 W
Frequency - Transition：30MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

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2N5339

Overview

The Central Semiconductor 2N5339 is a silicon epitaxial planar NPN transistor housed in a TO-39 metal can package. Designed for power amplifier and switching applications, it features a collector-emitter voltage of 100 V and a continuous collector current rating of 5.0 A. The device dissipates up to 6.0 W at 25°C with a thermal resistance of 29 °C/W. It exhibits low saturation voltages (max 1.2 V at 5.0 A) and high-speed switching capabilities, including a transition frequency of 30 MHz.

Feature Summary

Designed for power amplifier and switching power supply applications requiring high current handling
Features very low saturation voltage characteristics for efficient operation
Capable of high-speed switching performance at elevated current levels
Constructed using silicon epitaxial planar technology

Applications

Power amplifier circuits
Switching power supplies
High current switching applications

Procurement Notes

Verify the specific plating configuration required for your assembly process before ordering. The datasheet indicates that Tin/Lead plated devices require the suffix TIN/LEAD, while Lead-Free versions require PBFREE. Confirm availability status as this component may be subject to discontinuation notices or stock-only limitations.

Selection Notes

Select the 2N5339 when a robust NPN transistor with a 100 V collector-emitter breakdown and 5.0 A continuous current capability is needed. Ensure the application requires the specific gain ranges provided for the 2N5337/2N5339 series compared to the lower gain variants in the same package family.

Part Context

This component belongs to the Central Semiconductor 2N5336 series of silicon NPN transistors. It shares the TO-39 case outline with related models such as the 2N5336, 2N5337, and 2N5338. These devices are engineered specifically for environments demanding high reliability and distinct electrical parameters for power management tasks.

Replacement Considerations

Official documentation lists no direct replacement part numbers for the 2N5339. Customers are advised to contact engineering support for assistance in locating alternate sources if necessary.

FAQ

What is the maximum junction temperature for the 2N5339?

The operating and storage junction temperature range extends from -65 to +200 °C.

How does the 2N5339 differ electrically from the 2N5336?

The 2N5339 offers higher DC current gain (hFE), ranging from 60 to 240 depending on the collector current, whereas the 2N5336 has a fixed minimum hFE of 30.