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The 2N5339P is an NPN power Bipolar Junction Transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 5A. The device has a power dissipation capacity of 1W and is designed for through-hole mounting in a Pin-D test package configuration.
Verify the specific datasheet revision and product change notifications prior to finalizing designs, as manufacturing parameters may be subject to updates. Confirm that the Pin-D test package meets the mechanical constraints of the target assembly process. Ensure compliance with RoHS directives if required by the end-use environment.
Select this component when a robust NPN power BJT with 100V breakdown and 5A current handling is required in a through-hole format. Consider the 1W power dissipation limit and ensure adequate heat sinking or airflow is available to maintain junction temperatures within safe operating limits during operation.
This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically categorized under bipolar transistors. It serves as a legacy or specialized power switching solution within the broader range of Microchip's transistor offerings, providing reliable performance for industrial and commercial electronic systems requiring high-current control.