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Product Detailed Parameters
- Description：POWER BJT
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5344 is a power bipolar junction transistor (BJT) constructed from silicon. It features a single PNP element housed in a TO-66 metal flange mount package with two pins. The device supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 250 V. It has a minimum DC current gain (hFE) of 25. The component is leaded, non-compliant with RoHS standards, and classified under ECCN code EAR99.
Feature Summary
- Utilizes a robust metal TO-66 flange mount package for effective thermal dissipation
- Designed as a high-voltage PNP silicon power transistor
- Supports direct flange mounting configurations
Applications
- High-voltage switching circuits
- Power amplifier stages
- Industrial control systems requiring rugged discrete transistors
Procurement Notes
Verify compliance requirements before procurement, as the 2N5344 is explicitly stated to be not RoHS compliant and contains lead. Confirm that the application environment permits the use of leaded components. Ensure the ordering documentation specifies the standard TO-66 metal package variant. Check for any specific military or aerospace qualification requirements if applicable to the end-use system.
Selection Notes
Select this component when a high-voltage PNP transistor with a hermetic metal package is required. The TO-66 form factor provides superior heat sinking capabilities compared to plastic packages. Consider the 250 V breakdown voltage limit and 1 A current rating during circuit design. Verify that the minimum hFE of 25 meets the drive requirements of the intended load.
Part Context
The 2N5344 belongs to the family of power bipolar transistors manufactured by Microchip Technology. It serves as a discrete semiconductor device within the broader category of NPN and PNP transistors. The TO-66 metal case style is historically associated with high-reliability and high-power applications where thermal management is critical.
Replacement Considerations
Consult official Microchip datasheets for cross-reference information. No public substitute part numbers are confirmed in the provided source material.
