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The 2N5349 is a power NPN silicon bipolar junction transistor manufactured by Microchip Technology. It features a collector current rating of 7A and a collector-emitter breakdown voltage of 100V. The device is constructed as a single-element structure housed in a TO-59 metal can package with three pins. This component is designed for high-power switching and amplification applications requiring robust performance within the specified electrical limits.
Verify the specific manufacturer lot and date code upon receipt to ensure compliance with project timelines. Confirm that the TO-59 package dimensions match the PCB footprint requirements. Check for any RoHS status discrepancies if environmental compliance is mandatory, as historical data indicates varying regulatory classifications for this part number across different production eras.
Select the 2N5349 when circuit designs demand a 100V voltage rating combined with 7A continuous current capacity. Ensure the application allows for through-hole mounting due to the TO-59 package style. Consider thermal dissipation requirements carefully, as the metal case aids heat transfer but requires appropriate isolation or mounting techniques on the printed circuit board.
This component belongs to the family of standard military-grade and commercial power transistors. The 2N5349 designation follows the JEDEC numbering system for NPN silicon devices. Microchip Technology continues to support legacy part numbers alongside modern alternatives, maintaining compatibility with existing designs that rely on established bipolar transistor specifications.
Consult official cross-reference lists for direct pin-compatible substitutes. Verify that alternative parts meet the same 100V V(BR)CEO and 7A I(C) ratings. Ensure replacement packages are compatible with existing thermal management strategies.