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Product Detailed Parameters
- Description：25V 350MA 360MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：350 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 50mA, 1V
- Power - Max：360 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5356 PBFREE is a silicon PNP bipolar junction transistor manufactured via the epitaxial planar process. It features a maximum collector-emitter voltage of 25 V and a maximum collector-base voltage of 25 V. The device supports a maximum DC collector current of 700 mA, with an emitter-base voltage rating of 4 V. Key electrical specifications include a power dissipation of 360 mW and a gain bandwidth product of 250 MHz. The component operates within a temperature range of -65°C to +150°C and is housed in a TO-92-3 through-hole package.
Feature Summary
- Epitaxial planar silicon construction for general-purpose amplifier applications
- High thermal stability with a maximum operating temperature of +150°C
- Suitable for high-speed switching due to a 250 MHz gain bandwidth product
Applications
- General-purpose amplification circuits
- High-speed switching applications
- Electronic circuit design requiring robust thermal performance
Procurement Notes
Verify the specific ordering suffix (e.g., APM) against the manufacturer's official documentation to ensure correct material composition and lead-free status. Confirm that the required package variant matches the intended PCB footprint. Cross-reference the datasheet parameters with system requirements before finalizing procurement decisions.
Selection Notes
Select this component when a PNP transistor with a 25 V voltage rating and 360 mW power dissipation is required. Ensure the application demands a gain bandwidth product of at least 250 MHz. Verify that the TO-92-3 package form factor aligns with the mechanical constraints of the target assembly.
Part Context
This part belongs to the Central Semiconductor PNP transistor family, designed for reliable performance in standard electronic circuits. The 2N5356 designation indicates a specific configuration within the broader catalog of bipolar junction transistors offered by the manufacturer for various industrial and commercial uses.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may differ in critical parameters such as gain bandwidth or thermal limits.
