SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 2N5365 TIN/LEAD is a silicon NPN planar epitaxial transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 12 V. The device supports a continuous collector current of 300 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 7000 to 20000 at specified test conditions, a transition frequency (fT) of 60 MHz, and a collector-emitter saturation voltage of 1.0 V maximum. Operating temperatures range from -65°C to +150°C.
Verify the specific plating suffix required for your manufacturing process. The TIN/LEAD designation indicates traditional lead-based solder finish compatibility. Confirm RoHS compliance status against local regulatory requirements before integration into final assemblies. Check current availability as production cycles may vary significantly for legacy component lines.
Select this component when high current gain is critical for base drive efficiency. The 40 V collector-emitter rating limits suitability for higher voltage power rails. Ensure the 625 mW power dissipation capability aligns with thermal management constraints in the target enclosure design compared to higher-power alternatives.
This part belongs to the standard bipolar junction transistor family manufactured by Central Semiconductor. It utilizes planar epitaxial technology for consistent electrical characteristics. The TO-92-3 package provides a cost-effective solution for low-to-medium power discrete transistor applications requiring reliable through-hole assembly.
Direct pin-compatible substitutes include the MPS-A13 or 2N3904 series variants, though electrical parameters such as gain and voltage ratings must be verified against specific circuit requirements.