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Product Detailed Parameters
- Description：40V 300MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 1V
- Power - Max：625 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N5366 APM TIN/LEAD is a silicon NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage of 30V, a collector-base voltage of 40V, and an emitter-base voltage of 5V. The device supports a continuous collector current of 600mA with a power dissipation rating of 625mW. Operating temperatures range from -65°C to +150°C. DC current gain (hFE) ranges from a minimum of 80 at 10V and 2mA to a maximum of 600 at 10V and 10mA.
Feature Summary
- High DC current gain capability suitable for amplification applications
- Robust thermal performance with extended operating temperature limits
- Tin/lead termination finish for specific soldering requirements
Applications
- General-purpose signal amplification circuits
- Switching applications requiring moderate current handling
- Audio frequency amplifier stages
Procurement Notes
Verify the exact suffix designation against official Central Semiconductor documentation to confirm tin/lead plating specifications. Ensure procurement channels provide valid RoHS exemption status if required by your assembly process. Confirm package integrity upon receipt as these components are typically supplied in bulk or ammo pack formats.
Selection Notes
Select this component when a standard NPN BJT with moderate voltage ratings and high current gain is required. The TO-92-3 package facilitates easy prototyping and through-hole assembly. Consider the 625mW power dissipation limit for thermal management in dense circuit layouts.
Part Context
This part belongs to the legacy discrete semiconductor lineup manufactured by Central Semiconductor Corp, now operating under AEM Inc. The company specializes in high-reliability passive and active components for aerospace, military, and medical markets. This specific transistor represents a standard industry-compatible NPN device within their broader portfolio.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official datasheets for pin-compatible alternatives such as the MPSA12 or similar NPN transistors, ensuring electrical parameters meet or exceed the original design requirements.
