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The 2N5366 PBFREE is a silicon PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector current of 300 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device features an emitter-base voltage (VEBO) rating of 4 V, a power dissipation capacity of 625 mW, and a transition frequency (fT) of 250 MHz. DC current gain ranges from a minimum of 100 to a maximum of 300.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status. Confirm that the TO-92-3 through-hole package matches the target PCB footprint requirements. Ensure the 40 V voltage ratings align with the operational limits of the intended circuit design before finalizing procurement.
Select this component when a standard PNP BJT with moderate current handling capabilities is required. The TO-92-3 package suits prototyping and low-volume assembly. Verify that the 300 mA collector current limit meets the load requirements. Consider the 625 mW power dissipation constraint for thermal management in enclosed environments.
This part belongs to the 2N53 series of bipolar transistors produced by Central Semiconductor. The manufacturer specializes in discrete semiconductor products, offering both surface mount and through-hole options. The 2N5366 serves as a standard replacement for legacy PNP transistor designs in industrial and consumer electronics.
Consult official datasheets for direct pin-compatible substitutes within the same voltage and current class. Verify that alternative parts maintain the TO-92-3 package dimensions and equivalent hFE gain ranges.