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Product Detailed Parameters
- Description：40V 300MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 50mA, 1V
- Power - Max：625 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5367 APM TIN/LEAD is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a single configuration housed in a TO-92-3 through-hole package with tin/lead termination. The device supports a collector-emitter voltage of 40V, a collector-base voltage of 50V, and an emitter-base voltage of 5V. It handles a continuous collector current of 600mA with a power dissipation rating of 625mW. The component operates within a temperature range of -65°C to +150°C and provides a minimum DC current gain of 80 at specified test conditions.
Feature Summary
- Utilizes silicon technology for reliable performance in standard electronic circuits.
- Provides high current gain suitable for driving loads or signal amplification.
- Features a robust thermal design allowing operation up to 150°C junction temperature.
Applications
- General-purpose low-power switching circuits
- Audio amplifier stages
- Signal processing applications
Procurement Notes
Verify the specific suffix 'APM' against official datasheets to confirm lead composition and marking details. Ensure the ordering quantity aligns with manufacturer packaging constraints. Confirm RoHS compliance status if required by project specifications. Validate that the tin/lead finish meets solderability requirements for the intended assembly process.
Selection Notes
Select this component when a standard NPN BJT with moderate voltage ratings and 600mA current capability is required. The TO-92-3 package is suitable for prototyping and low-volume production. Consider the 625mW power dissipation limit when designing heat management strategies. Compare current gain specifications against circuit requirements to ensure adequate drive capability.
Part Context
This part belongs to the broader category of discrete bipolar transistors manufactured by Central Semiconductor. It serves as a fundamental active component in analog and digital electronics. The TO-92-3 form factor is widely used in consumer electronics and industrial control systems. It complements other NPN and PNP variants in the manufacturer's portfolio for complementary circuit designs.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching VCEO, IC, and package dimensions. Verify pinout compatibility before replacing to prevent circuit damage. Check if alternative parts offer improved thermal performance or higher current ratings if system margins are tight.
