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Product Detailed Parameters
- Description：30V 500MA 360MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 15mA, 150mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 10V
- Power - Max：360 mW
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5375 APM TIN/LEAD is a PNP silicon epitaxial planar transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 500 mA. The device operates with a power dissipation of 360 mW in a TO-92-3 through-hole package. Key electrical characteristics include a transition frequency (fT) of 150 MHz, ensuring adequate bandwidth for medium-speed switching. DC current gain (hFE) is specified at a minimum of 100 under standard test conditions. The saturation voltage is rated at 300 mV, supporting efficient low-loss operation.
Feature Summary
- Epitaxial planar construction for reliable general-purpose performance
- Medium-speed switching capability with 150 MHz transition frequency
- Low saturation voltage for efficient circuit operation
Applications
- General-purpose amplification circuits
- Medium-speed switching applications
- Small-signal processing tasks
Procurement Notes
Verify the specific ordering suffix to confirm the tin/lead plating finish, as environmental compliance requirements may dictate the need for lead-free alternatives. Confirm that the TO-92-3 through-hole package aligns with existing board layouts. Ensure the manufacturer's standard delivery period is accounted for in production schedules, as availability may vary. Cross-reference the datasheet specifications against the intended operating temperature range to guarantee reliability under thermal stress.
Selection Notes
Select this component when a PNP bipolar junction transistor is required for general-purpose roles involving moderate current levels up to 500 mA. The 30 V breakdown voltage suits low-voltage logic or signal circuits. Consider the 360 mW power dissipation limit for thermal management planning. The TO-92-3 package is suitable for prototyping and low-volume manufacturing where through-hole mounting is preferred over surface-mount technologies.
Part Context
This part belongs to the Central Semiconductor 2N5374/2N5375 series of PNP silicon transistors. These devices are manufactured using an epitaxial planar process, which enhances stability and performance consistency compared to older alloy junction types. The series is positioned within the company's portfolio of small-signal transistors, offering a balance between gain, speed, and power handling for versatile electronic designs.
Replacement Considerations
Public confirmed substitute part numbers include 2N5823 APM PBFREE and 2N5823 APM TIN/LEAD from Central Semiconductor Corp, listed as parameter equivalent replacements.
